Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells

被引：100

作者：

Vakili, K ^{[1
]}

Shkolnikov, YP ^{[1
]}

Tutuc, E ^{[1
]}

De Poortere, EP ^{[1
]}

Shayegan, M ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 22期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.92.226401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45 Angstrom wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to two-dimensional electrons in Si-MOSFETs but with only one valley occupied. We observe an enhancement of the spin susceptibility over the band value that increases as the density is decreased, following closely the prediction of quantum Monte Carlo calculations and continuing at finite values through the metal-insulator transition.

引用

页码：226401 / 1

页数：4

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