Effect of the intense laser field on the valance band for Ga1-xAlxAs/GaAs heterostructure

被引：6

作者：

Ozturk, Emine ^{[1
]}

Sokmen, Ismail ^{[2
]}

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Dokuz Eylul Univ, Dept Phys, Izmir, Turkey

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 45卷 / 01期

关键词：

Single quantum well; Intense laser field; Valance band; QUANTUM-WELL; ABSORPTION; IMPURITIES; RADIATION; DRIVEN; TRANSPORT; EXCITONS; ATOM;

D O I：

10.1016/j.spmi.2008.11.009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The energy levels of holes in symmetric single quantum well under the laser field are theoretically calculated within the framework of the effective mass approximation. Results obtained show that the potential profile and energy levels can significantly be modified and controlled by intense laser field and the well width. The effect of the laser field and the well width on the energy difference changes the degree of the confinement, and thus this behavior can be used to study these systems in regions of interest, without the need for the growth of many different samples. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：16 / 21

页数：6

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