Direct measurement of the interfacial barrier height of the manganite p-n heterojunction

被引：1
|
作者：
Wang Mei [1 ]
Wang Deng-Jing [1 ]
Wang Ru-Wu [1 ]
Li Yun-Bao [1 ]
机构：
[1] Wuhan Univ Sci & Technol, Dept Appl Phys, Wuhan 430081, Peoples R China
来源：
CHINESE PHYSICS B | 2014年 / 23卷 / 04期
基金：
中国国家自然科学基金;
关键词：
manganite; heterojunction; interfacial barrier; JUNCTION;
D O I：
10.1088/1674-1056/23/4/047301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A manganite p-n heterojunction composed of La0.67Sr0.33MnO3 film and 0.05 wt% Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R-1/T curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.
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页数：4
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