Velocity-overshoot subthreshold current model for deep-submicrometer MOSFET devices

被引：0

作者：

Qian, WS ^{[1
]}

Zhou, X ^{[1
]}

Wang, YW ^{[1
]}

Lim, KY ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

2000 INTERNATIONAL CONFERENCE ON MODELING AND SIMULATION OF MICROSYSTEMS, TECHNICAL PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling C, is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with MEDICI simulation results verifies the model.

引用

页码：396 / 399

页数：4

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