Structure of high resistivity GaAs film grown by low-temperature metalorganic chemical vapor deposition

被引：1
|
作者：
Chen, WC
Chang, CS
Chan, SH
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTROOPT ENGN,HSINCHU,TAIWAN
[2] NATL NANO DEVICE LAB,HSINCHU,TAIWAN
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 21期
关键词：
D O I：
10.1063/1.118022
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The structure of a low-temperature GaAs layer grown by low-pressure metalorganic chemical vapor deposition with precursors of triethylgallium and arsine is reported. Dense particles containing Ga clusters are found in a high resistivity GaAs film grown at 420 degrees C, The size and concentration of particles are about 800-1000 nm and 7X10(11) cm(-3), respectively. (C) 1996 American Institute of Physics.
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收藏
页码：3239 / 3241
页数：3
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