Metal-oxide lift-off for optimized heterointegration of photonic circuits

被引:0
|
作者
Izuhara, T [1 ]
Roth, R [1 ]
Djukic, D [1 ]
Radojevic, AM [1 ]
Osgood, RM [1 ]
Bakhru, S [1 ]
Bakhru, H [1 ]
机构
[1] Columbia Univ, Microelect Sci Labs, New York, NY 10027 USA
来源
关键词
heterointegration; thin films; photonic integrated circuits; metal oxides; optical integration;
D O I
10.1117/12.537850
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Crystal ion slicing can fabricate microns-thin-films from bulk, single-crystal metal oxides, which are important materials in optical, microwave, and electrical applications. These thin-films maintain single-crystal properties, which are very difficult to achieve in other thin-film technologies such as epitaxial growth. In this paper, ion-slicing technique is reviewed briefly from a process, material, and device perspective. The demonstrated applications in integrated optics are listed, along with a complete reference to ion-slicing related publications.
引用
收藏
页码:74 / 80
页数:7
相关论文
共 50 条
  • [21] Dry film process development for electroplating and lift-off of metal
    Kanikella, Phaninder R.
    O'Keefe, Matthew J.
    Kim, Chang-Soo
    MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XIII, 2008, 6882
  • [22] REFRACTORY LIFT-OFF PROCESS WITH APPLICATIONS TO HIGH-TC SUPERCONDUCTING CIRCUITS
    HOWARD, RE
    APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1034 - 1035
  • [23] Photonic crystal laser lift-off GaN light-emitting diodes
    David, A
    Fujii, T
    Moran, B
    Nakamura, S
    DenBaars, SP
    Weisbuch, C
    Benisty, H
    APPLIED PHYSICS LETTERS, 2006, 88 (13)
  • [24] GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off
    张小英
    阮育娇
    陈松岩
    李成
    半导体学报, 2009, 30 (12) : 5 - 8
  • [25] GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off
    Zhang Xiaoying
    Ruan Yujiao
    Chen Songyan
    Li Cheng
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (12)
  • [26] Lift-off process for fine-patterned PZT film using metal oxide as a sacrificial layer
    Phan Trong Tue
    Shimoda, Tatsuya
    Takamura, Yuzuru
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2017, 27 (01)
  • [27] High-rate GaAs epitaxial lift-off technique for optoelectronic integrated circuits
    Maeda, J
    Sasaki, Y
    Dietz, N
    Shibahara, K
    Yokoyama, S
    Miyazaki, S
    Hirose, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1554 - 1557
  • [28] Single-crystalline silicon lift-off films for metal-oxide-semiconductor devices on arbitrary substrates
    Tilke, A
    Rotter, M
    Blick, RH
    Lorenz, H
    Kotthaus, JP
    APPLIED PHYSICS LETTERS, 2000, 77 (04) : 558 - 560
  • [29] COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR CIRCUITS - NEW PROSPECTIVES
    FULLAGAR, D
    ELETTROTECNICA, 1981, 68 (09): : 779 - 783
  • [30] Reliability Study of Metal-Oxide Semiconductors in Integrated Circuits
    Malozyomov, Boris V.
    Martyushev, Nikita V.
    Bryukhanova, Natalia Nikolaevna
    Kondratiev, Viktor V.
    Kononenko, Roman V.
    Pavlov, Pavel P.
    Romanova, Victoria V.
    Karlina, Yuliya I.
    MICROMACHINES, 2024, 15 (05)