Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy

被引：27
|
作者：
Chao, C. K. [1 ]
Chyi, J. I.
Hsiao, C. N.
Kei, C. C.
Kuo, S. Y.
Chang, H. -S.
Hsu, T. M.
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan
[2] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 23期
关键词：
D O I：
10.1063/1.2210296
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the growth of indium nitride (InN) nanorods on sapphire by chemical-beam epitaxy without a catalyst. The nanorods are synthesized nearly unidirectionally along the 001) direction and the diameters varied in the range of 20-40 nm with In/N flow ratio. Single-crystalline wurtzite structure is verified by x-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN nanorods have sharp peaks E-2 (high) at 491 cm(-1) and A(1) (LO) at 593 cm(-1). (c) 2006 American Institute of Physics.
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