Catalyst-Free Metal-Organic Chemical Vapor Deposition Growth of InN Nanorods

被引：1

作者：

Kim, Min Hwa ^{[2
]}

Chung, Kunook ^{[1
]}

Moon, Dae Young ^{[2
]}

Jeon, Jong-Myeong

Kim, Miyoung

Park, Jinsub ^{[3
]}

Nanishi, Yasushi ^{[2
,4
]}

Yi, Gyu-Chul ^{[1
]}

Yoon, Euijoon ^{[2
,5
]}

机构：

[1] Seoul Natl Univ, Natl Creat Res Initiat Ctr Semicond Nanorods, Dept Phys & Astron, Seoul 151747, South Korea

[2] Seoul Natl Univ, Hybrid Mat Program WCU, Dept Mat Sci & Engn, Seoul 151744, South Korea

[3] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

[4] Ritsumeikan Univ, Dept Photon, Sch Sci & Engn, Kyoto, Shiga 5258577, Japan

[5] Seoul Natl Univ, Energy Semicond Res Ctr, Adv Inst Convergence Technol, Suwon 443270, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 02期

关键词：

InN Nanorod; Catalyst-Free; Metal-Organic Chemical Vapor Deposition (MOCVD); NANOWIRES; ZNO;

D O I：

10.1166/jnn.2012.4698

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrated the successful growth of catalyst-free InN nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. Morphological evolution was significantly affected by growth temperature. At 710 degrees C, complete InN nanorods with typical diameters of 150 nm and length of similar to 3.5 mu m were grown with hexagonal facets. theta-2 theta X-ray diffraction measurement shows that (0002) InN nanorods grown on (0001) Al2O3 substrates were vertically aligned along c-axis. In addition, high resolution transmission electron microscopy indicates the spacing of the (0001) lattice planes is 0.28 nm, which is very close to that of bulk InN. The electron diffraction patterns also revealed that the InN nanorods are single crystalline with a growth direction along < 0001 > with (10-10) facets.

引用

页码：1645 / 1648

页数：4

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