Monograin layers as optoelectronic devices

被引:0
|
作者
Mellikov, E
Meissner, D
Varema, T
Hiie, J
Altosaar, M
机构
关键词
CdS; CdSe; CdTe; CuInS2; monograin; layer; recrystallisation; flux; powder;
D O I
10.1117/12.266538
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The possibility is demonstrated to manufacture by the recrystallization of initial powders in different molten fluxes different A2B6 powders with the qualities acceptable for monograin layer construction. Several technologies of formation of monograin layers and optoelectronic devices were developed and studied. It is shown, that insufficient electronic parameters of semiconductor sensors and solar cells designed as monograin layers are connected with the insufficient cleaning of surfaces of crystals in the monograin layer.
引用
收藏
页码:214 / 219
页数:6
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