Monograin layers as optoelectronic devices

被引：0
|
作者：
Mellikov, E
Meissner, D
Varema, T
Hiie, J
Altosaar, M
机构：
来源：
OPTICAL INORGANIC DIELECTRIC MATERIALS AND DEVICES | 1997年 / 2967卷
关键词：
CdS; CdSe; CdTe; CuInS2; monograin; layer; recrystallisation; flux; powder;
D O I：
10.1117/12.266538
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The possibility is demonstrated to manufacture by the recrystallization of initial powders in different molten fluxes different A2B6 powders with the qualities acceptable for monograin layer construction. Several technologies of formation of monograin layers and optoelectronic devices were developed and studied. It is shown, that insufficient electronic parameters of semiconductor sensors and solar cells designed as monograin layers are connected with the insufficient cleaning of surfaces of crystals in the monograin layer.
引用
收藏
页码：214 / 219
页数：6
相关论文
共 50 条
  • [1] MONOGRAIN LAYERS
    TEVELDE, TS
    VANHELDE.GW
    PHILIPS TECHNICAL REVIEW, 1968, 29 (8-9): : 238 - +
  • [2] STRAINED LAYERS FOR OPTOELECTRONIC DEVICES
    ADAMS, AR
    DUNSTAN, DJ
    OREILLY, EP
    PHYSICA SCRIPTA, 1991, T39 : 196 - 203
  • [3] Monograin layers and membranes for photovoltaics
    Altosaar, M
    Varema, T
    Deppe, M
    Wirts, C
    Deppe, J
    Hiie, J
    Hiesgen, R
    Mellikov, E
    Meissner, D
    CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 877 - 880
  • [4] Monograin powders and layers for photovoltaic application
    Altosaar, M
    Mellikov, E
    Hiie, J
    Meissner, D
    Varema, T
    THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS, 1996, 426 : 563 - 568
  • [5] Transparent current spreading layers for optoelectronic devices
    Porch, A
    Morgan, DV
    Perks, RM
    Jones, MO
    Edwards, PP
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) : 4211 - 4218
  • [6] Transparent current spreading layers for optoelectronic devices
    Porch, A., 1600, American Institute of Physics Inc. (96):
  • [7] Electronic and optoelectronic devices using quaternary AlInGaN layers
    Khan, MA
    Shatalov, M
    Simin, G
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II, 2002, 2002 (03): : 322 - 334
  • [8] Semi-insulating epitaxial layers for optoelectronic devices
    Lourdudoss, S
    Söderström, D
    Barrios, CA
    Sun, YT
    Messmer, ER
    SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, : 171 - 178
  • [9] SEM APPLICATIONS FOR CHARACTERIZATION OF GA AS LAYERS AND STRUCTURES FOR OPTOELECTRONIC DEVICES
    COCITO, M
    GORGELLINO, F
    JOURNAL OF SUBMICROSCOPIC CYTOLOGY AND PATHOLOGY, 1978, 10 (01) : 134 - 134
  • [10] Fabrication and characterization of InP:Zn layers for optoelectronic and microwave devices
    Andrievski, VF
    Guschinskaya, EV
    Malyshev, SA
    EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2002, : 2 - 7
12345