Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition

被引：3

作者：

Sun, Guodong ^{[1
]}

Li, Hejun ^{[1
]}

Zhang, Shouyang ^{[1
]}

Fu, Qiangang ^{[1
]}

Cao, Wei ^{[1
]}

Jiao, Yanqiong ^{[1
]}

机构：

[1] Northwestern Polytech Univ, CC Composites Technol Res Ctr, Xian 710072, Peoples R China

来源：

MATERIALS RESEARCH, PTS 1 AND 2 | 2009年 / 610-613卷

关键词：

Finite Element Simulation; Chemical Vapor Deposition; Deposition Rate; Orthogonal Design; SiC Coating; COMPOSITES; CVD;

D O I：

10.4028/www.scientific.net/MSF.610-613.635

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A two-dimensional mathematical model for deposition behavior of SiC coating on C/C composites in a hot-wall CVD reactor was developed. Deposition rate of SiC was calculated by finite element method and optimized by using an orthogonal L-9(3)(4) test. The single and coupling effects of process parameters on deposition rate of SiC, including deposition temperature, the flux of mixed gases, the volume ratio of H-2 and Ar, and that of MTS and mixed gases, were Calculated and discussed. The optimal deposition rate of SiC was obtained.

引用

页码：635 / 640

页数：6

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