Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements

被引：0
|
作者：
Watanabe, S
Yamada, N
Yamada, Y
Taguchi, T
Takeuchi, T
Amano, H
Akasaki, I
机构：
[1] Hewlett Packard Labs, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[2] Yamaguchi Univ, Fac Engn, Dept Elect & Elect Engn, Yamaguchi 7558611, Japan
[3] Meijo Univ, Hightech Res Ctr, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1999年 / 216卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-3951(199911)216:1<335::AID-PSSB335>3.0.CO;2-S
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied the recombination process of undoped and Si-doped Ga0.84In0.16N/GaN MQWs by using cw and time-resolved photoluminescence. It was found that the piezoelectric field strongly affects the recombination process of GaInN/GaN MQWs. Si doping in QWs was shown to be effective to screen the field. Two different recombination transitions have been observed for all MQW samples we have investigated with an energy difference of about 60 meV when excitation power is high. The peaks at the higher energy side show stimulated-emission-like characteristics for all samples. Since the estimated carrier density is higher than the Mott-transition level, we suggest that the stimulated emission is caused by an electron-hole plasma.
引用
收藏
页码：335 / 339
页数：5
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