A compact 3D silicon interposer package with integrated antenna for 60GHz wireless applications

被引：0
|
作者：
Lamy, Y. [1 ]
Dussopt, L. [1 ]
El Bouayadi, O. [1 ]
Ferrandon, C. [1 ]
Siligaris, A. [1 ]
Dehos, C. [1 ]
Vincent, P. [1 ]
机构：
[1] CEA Grenoble, LETI, F-38054 Grenoble, France
来源：
2013 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC) | 2013年
关键词：
silicon interposer; 3D; TSV last; integrated antenna;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A 6.5x6.5 mm2 compact silicon interposer encompassing 2 Tx/Rx antenna, one RF chips, TSV via-last has been designed and fabricated for 60 GHz fast data transmission applications. First characterizations are described in this paper with a focus on reliability, antenna performances and Through-Silicon-Vias (TSV) characterization. It is first shown that more than 500 thermal cycles can be achieved with a double polymer layer passivation on the si interposer backside and polymer core solder balls. Secondly, the folded dipole antenna with a reflector on PCB have shown suitable properties (5 dBi in gain, -10 dB cross polarization) for mmw applications, which make silicon a competitive substrate for antenna integration. Finally, single TSV Ground-Signal-Ground transition has been characterized and successfully extracted up to 67GHz, with loss below 0.6 dB at 60GHz.
引用
收藏
页数：6
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