High performance CNT point emitter with graphene interfacial layer

被引：7

作者：

Lee, Jeong Seok ^{[1
]}

Kim, Taewoo ^{[1
]}

Kim, Seul-Gi ^{[4
]}

Cho, Myung Rae ^{[5
]}

Seo, Dong Kyun ^{[1
]}

Lee, Minwoo ^{[6
]}

Kim, Seontae ^{[5
]}

Kim, Dae Weon ^{[7
]}

Park, Gun-Sik ^{[5
]}

Jeong, Dae Hong ^{[6
]}

Park, Yun Daniel ^{[5
]}

Yoo, Ji-Beom ^{[4
]}

Kang, Tae June ^{[2
,3
]}

Kim, Yong Hyup ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mech & Aerosp Engn, Seoul 151742, South Korea

[2] Pusan Natl Univ, Coll Nanosci & Nanotechnol, Dept NanoMechatron Engn, Pusan 609735, South Korea

[3] Pusan Natl Univ, Coll Nanosci & Nanotechnol, Plus Nano Convergence Technol Div BK21, Pusan 609735, South Korea

[4] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea

[5] Seoul Natl Univ, Dept Phys & Astron, Seoul 151742, South Korea

[6] Seoul Natl Univ, Dept Chem Educ, Seoul 151742, South Korea

[7] Kunsan Natl Univ, Dept Naval Architecture, Gunsan 573701, South Korea

来源：

NANOTECHNOLOGY | 2014年 / 25卷 / 45期

基金：

新加坡国家研究基金会;

关键词：

graphene; carbon nanotube; interfacial layer; field emission; point emitter; ENHANCED FIELD-EMISSION; CARBON NANOTUBES; FILMS; DEPOSITION; GROWTH; TUBE;

D O I：

10.1088/0957-4484/25/45/455601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carbon nanotubes (CNTs) have great potential in the development of high-power electron beam sources. However, for such a high-performance electronic device, the electric and thermal contact problem between the metal and CNTs must be improved. Here, we report graphene as an interfacial layer between the metal and CNTs to improve the interfacial contact. The interfacial graphene layer results in a dramatic decrease of the electrical contact resistance by an order of 2 and an increase of the interfacial thermal conductivity by 16%. Such a high improvement in the electrical and thermal interface leads to superior field emission performance with a very low turn-on field of 1.49 V mu m(-1) at 10 mu A cm(-2) and a threshold field of 2.00 V mu m(-1) at 10 mA cm(-2), as well as the maximum current of 16 mA (current density of 2300 A cm(-2)).

引用

页数：8

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