Opportunities and challenges for magnetoelectric devices

被引:103
|
作者
Hu, Jia-Mian [1 ]
Nan, Ce-Wen [2 ]
机构
[1] Univ Wisconsin, Dept Mat Sci & Engn, 1509 Univ Ave, Madison, WI 53706 USA
[2] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
关键词
ELECTRIC-FIELD CONTROL; ROOM-TEMPERATURE; MULTIFERROIC HETEROSTRUCTURES; MAGNETIZATION REVERSAL; COMPOSITE-MATERIAL; VOLTAGE CONTROL; EXCHANGE BIAS; DOMAIN-WALLS; MAGNETISM; STRAIN;
D O I
10.1063/1.5112089
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Magnetoelectric effect enables controlling magnetism with an electric field or controlling polarization remotely with a magnetic field, without involving any driving electric currents. Since its discovery in the 1960s, the magnetoelectric effect has constantly been inspiring new fundamental science and the development of fascinating device concepts. This perspective is focused on two types of magnetoelectric devices: an ultralow-heat-dissipation spin memory/logic and a magnetoelectric magnetic field sensor. For each device, the paper first overviews the potential market needs, then discusses several key device attributes and outstanding challenges. An outlook for the development of other magnetoelectric devices is also provided. (c) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
引用
收藏
页数:16
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