Effect of processing on densification of nanostructured SiC ceramics fabricated by two-step sintering

被引：20
|
作者：
Lee, YI
Kim, YW
Mitomo, M
机构：
[1] Univ Seoul, Dept Mat Sci & Engn, Seoul 130743, South Korea
[2] Natl Inst Mat Sci, Tsukuba 3050044, Japan
来源：
JOURNAL OF MATERIALS SCIENCE | 2004年 / 39卷 / 11期
关键词：
D O I：
10.1023/B:JMSC.0000030743.62306.70
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of processing parameters on the densification behavior of nanostructured SiC ceramics was investigated in the two-step sintering process. The sintered specimens were cut and polished and etched by a CF4 plasma containing 7.8% O2 and the relative densities were determined by the Archimedes method. It was found that longer the sintering time the higher was the sintered density. The results show that the nanostructured SiC ceramics are obtained by two-step sintering when the specimen is heated to temperatures ranging from 1700 to 1750°C and then cooled immediately for long treatment at lower temperatures.
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页码：3801 / 3803
页数：3
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