Chemical bath deposition of IrO2 films on ITO substrate

被引:29
|
作者
Chen, Jing-Yu [1 ]
Chen, Yong-Min [1 ]
Sun, Yu [2 ]
Lee, Jyh-Fu [3 ]
Chen, San-Yuan [1 ]
Chen, Po-Chun [1 ]
Wu, Pu-Wei [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Grad Program Sci & Technol Accelerator Light Sour, Hsinchu 300, Taiwan
[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan
关键词
Iridium oxide; Thin film; Chemical bath deposition; Indium tin oxide; X-RAY-ABSORPTION; WATER OXIDATION; THIN-FILMS; IRIDIUM; ELECTRODE; CATALYSIS; SENSOR; EDGE;
D O I
10.1016/j.ceramint.2014.06.098
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A chemical bath is shown to deposit an IrO2 film on an ITO substrate. The chemical bath is prepared by mixing an Ir precursor (Na3IrCl6 center dot xH(2)O), an oxidizer (NaClO), a complexing agent (NaNO2), and a complex agent/stabilizer (NaOH) in an aqueous solution at a molar ratio of 1:1.5:10:30. From the UV-vis absorption spectra, complexes such as [Ir(OH)(6)]m(3-), [Ir(NO2)(4)Cl-2](3-), and [Ir(NO2)(3)Cl-3](3-) are identified. These complexes are relatively stable, minimizing the undesirable homogeneous precipitation of IrO2 nanoparticles in favor of the heterogeneous growth of the IrO2 film on the ITO substrate. Diffraction patterns from the as-deposited IrO2 film reveal an amorphous structure. In addition, profiles from X-ray absorption spectroscopy and X-ray photoelectron spectroscopy indicate that the oxidation state of the Ir in the as-deposited IrO2 film is +4. Thermogravimetric analysis confirms the inclusion of 10 wt% hydrated water in the as-deposited IrO2 film. Scanning electron microscope images reveal a continuous solid film with a smooth surface. The amorphous IrO2 film becomes rutile IrO2 phase after a mild heat treatment in air. (c) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:14983 / 14990
页数:8
相关论文
共 50 条
  • [21] Chemical bath deposition of SnO2 films on PEN/ITO substrates for efficient flexible perovskite solar cells
    Cui, Along
    Liu, Suolan
    Hong, Shiqi
    Li, Haiyan
    Wang, Lin
    Yang, Songwang
    NANOTECHNOLOGY, 2024, 35 (37)
  • [22] Effect of substrate temperature on structure and electrical resistivity of laser-ablated IrO2 thin films
    Wang, Chuanbin
    Gong, Yansheng
    Shen, Qiang
    Zhang, Lianmeng
    APPLIED SURFACE SCIENCE, 2006, 253 (05) : 2911 - 2914
  • [23] Active IrO2 and NiO Thin Films Prepared by Atomic Layer Deposition for Oxygen Evolution Reaction
    Matienzo, D. J. Donn
    Settipani, Daniel
    Instuli, Emanuele
    Kallio, Tanja
    CATALYSTS, 2020, 10 (01)
  • [24] Annealing effects on the structural properties of IrO2 thin films
    Kim, Hyoun Woo
    Shim, Seung Hyun
    Myung, Ju Hyun
    Lee, Chongmu
    VACUUM, 2008, 82 (12) : 1400 - 1403
  • [25] GROWTH OF IRO2, SNO2, AND SNO2=IRO2 CRYSTALS
    REAMES, FM
    MATERIALS RESEARCH BULLETIN, 1976, 11 (09) : 1091 - 1095
  • [26] Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics
    Di Palma, Valerio
    Pianalto, Andrea
    Perego, Michele
    Tallarida, Graziella
    Codegoni, Davide
    Fanciulli, Marco
    NANOMATERIALS, 2023, 13 (06)
  • [27] Influence of deposition conditions on Ir/IrO2 oxygen barrier effectiveness
    Pinnow, CU
    Kasko, I
    Nagel, N
    Poppa, S
    Mikolajick, T
    Dehm, C
    Hösler, W
    Bleyl, F
    Jahnel, F
    Seibt, M
    Geyer, U
    Samwer, K
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9591 - 9597
  • [28] Influence of pH on properties of ZnS thin films deposited on SiO2 substrate by chemical bath deposition
    Luque, P. A.
    Castro-Beltran, A.
    Vilchis-Nestor, A. R.
    Quevedo-Lopez, M. A.
    Olivas, A.
    MATERIALS LETTERS, 2015, 140 : 148 - 150
  • [29] Kinetics of the chemical bath deposition of ZnSe films
    Ganchev, M
    Stratieva, N
    Tzvetkova, E
    Gadjov, I
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (10-12) : 847 - 848
  • [30] Kinetics of the chemical bath deposition of ZnSe films
    M. Ganchev
    N. Stratieva
    E. Tzvetkova
    I. Gadjov
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 847 - 848