Effect of an initially sulphur-rich sprayed solution on CuInS2 thin films

被引：12
|
作者：
Bihri, H [1 ]
Abd-Lefdil, M [1 ]
机构：
[1] Univ Mohammed V, Fac Sci, Dept Phys, Phys Mat Lab, Rabat, Morocco
来源：
THIN SOLID FILMS | 1999年 / 354卷 / 1-2期
关键词：
semiconductors; structural properties; optical properties; conductivity;
D O I：
10.1016/S0040-6090(99)00433-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Copper indium disulphide CuInS2 thin films were prepared by spray pyrolysis technique. Improvement of CuInS2 films stoichiometry was found by increasing the sulphur content in the sprayed solution. X-ray diffraction, transmission and electrical resistivity results are discussed as a function of the film composition. The films were single-phase and showed a preferred orientation (112), with chalcopyrite characteristic peak (103) for high sulphur content. P-type CuInS2 with a conductivity value in the range 10(-1)-10(-3) Omega(-1) cm(-1) and a gap energy of about 1.4 eV were obtained. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：5 / 8
页数：4
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