Transparent conductive oxide thin films of tungsten-doped indium oxide

被引：54

作者：

Li, Xifeng ^{[1
]}

Zhang, Qun ^{[1
]}

Miao, Weina ^{[1
]}

Huang, Li ^{[1
]}

Zhang, Zhuangjian ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

来源：

THIN SOLID FILMS | 2006年 / 515卷 / 04期

关键词：

mobility; transparent conductive oxide; tungsten-doped indium oxide; indium oxide; sputtering;

D O I：

10.1016/j.tsf.2006.07.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent conductive oxide thin film of tungsten-doped In2O3 (IWO) has been prepared by reactive direct current magnetron sputtering from the tungsten-embedded indium metal target. The effect of tungsten doping content on the optoelectrical properties of IWO films was investigated. The lowest resistivity of 2.7 x 10(-4) Omega(.)cm was reproducibly obtained, with carrier mobility greater than 57 cm(2) V-1 s(-1) and carrier concentration of 4.0 x 10(20) cm(-3), as well as the transmission in visible light range exceeding 80%. X-ray diffraction measurements indicate that the as-deposited IWO films are well crystallized with a preferential orientation of (222). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2471 / 2474

页数：4

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