A fully integrated SiGe low phase noise push-push VCO for 82 GHz

被引：0

作者：

Wanner, Robert ^{[1
]}

Schaefer, Herbert ^{[1
]}

Lachner, Rudolf ^{[1
]}

Olbrich, Gerhard R. ^{[1
]}

Russer, Peter ^{[1
]}

机构：

[1] Tech Univ Munich, Lehrstuhl Hochfrequenztech, D-80333 Munich, Germany

来源：

GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The oscillator output frequency can be varactor tuned from 80.6 GHz to 82.4 GHz. In this frequency range the measured output power is 3.5 +/- 0.4 dBm while them measured single sideband phase noise is less than - 105 dBc/Hz at 1 MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an VCO in this frequency band. The transistors used in this work show a maximum transit frequency f(T) = 200GHz and a maximum frequency of oscillation f(max) = 275 GHz. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used.

引用

页码：249 / 252

页数：4

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