Nonlinear modeling of LDMOS transistors for high-power FM transmitters

被引：11

作者：

Bosi, Gianni ^{[1
]}

Crupi, Giovanni ^{[2
]}

Vadala, Valeria ^{[1
]}

Raffo, Antonio ^{[1
]}

Giovannelli, Antonello ^{[3
]}

Vannini, Giorgio ^{[1
]}

机构：

[1] Univ Ferrara, Dipartimento Ingn, I-44122 Ferrara, Italy

[2] Univ Messina, DICIEAMA, I-98166 Messina, Italy

[3] ELENOS Srl, Ferrara, Italy

来源：

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2014年 / 27卷 / 5-6期

关键词：

FET nonlinear model; LDMOS; low-frequency dispersion characterization; microwave power amplifier; nonlinear measurement; non-quasi-static model; AMPLIFIER;

D O I：

10.1002/jnm.1939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a nonlinear model of a commercial 10-W laterally diffused metal oxide semiconductor (LDMOS) transistor for FM transmitters is identified. It is based on high-frequency small-signal measurements for the identification of both the parasitic network and the strictly nonlinear dynamic effects, whereas low-frequency large-signal measurements are exploited for the description of the dynamic I/V characteristics of the device above the cut-off of low-frequency dispersion. A validation of the proposed model is provided by using time-domain nonlinear measurements carried out at 40 MHz and 100 MHz. Copyright (C) 2013 John Wiley & Sons, Ltd.

引用

页码：780 / 791

页数：12

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