Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

被引：14

作者：

Roldán, JB ^{[1
]}

Gámiz, F ^{[1
]}

López-Villanueva, JA ^{[1
]}

Cartujo-Cassinello, P ^{[1
]}

机构：

[1] Univ Granada, Dept Elect & Tecnol Comp, Fac Ciencias, Granada 18071, Spain

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 05期

关键词：

D O I：

10.1109/55.841308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.

引用

页码：239 / 241

页数：3

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