High resolution surface analysis by TOF-SIMS

被引:0
|
作者
Hagenhoff, B [1 ]
机构
[1] TASCON GMBH, D-48149 Munster, Germany
关键词
Secondary Ion Mass Spectrometry (SIMS); Time-of Flight Secondary Ion Mass Spectrometry (TOF-SIMS); SIMS imaging; achievable lateral resolution in SIMS imaging; contrast mechanisms in SIMS imaging;
D O I
暂无
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) has developed into a mature technique meanwhile applied in many industrial laboratories for elemental and molecular surface characterization. Not only spectroscopic information but also information on the lateral distribution of surface species can be obtained (TOF-SIMS Imaging). The lateral resolution for the detection of elements is well beyond 100 nm using modern liquid metal ion Suns. For molecular species, however, the achievable lateral resolution not only depends on the performance of the instruments but also on sample parameters like obtainable secondary ion yield and the area disturbed on the sample by impact of a single primary ion. Whereas for larger molecules the achievable resolution can be several micron, imaging with sub-mu m resolution is possible if one monitors characteristic fragment ions.
引用
收藏
页码:259 / 271
页数:13
相关论文
共 50 条
  • [31] Application of ToF-SIMS surface analysis to tribochemistry in metal forming processes
    Dauchot, G
    De Castro, E
    Repoux, M
    Combarieu, R
    Montmitonnet, P
    Delamare, F
    WEAR, 2006, 260 (03) : 296 - 304
  • [32] SURFACE-ANALYSIS OF BIODEGRADABLE POLY(ANHYDRIDE) COPOLYMERS BY TOF-SIMS
    DAVIES, MC
    LYNN, RAP
    LANGER, R
    DOMB, A
    PAUL, A
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1990, 199 : 31 - MACRO
  • [33] Copper surface analysis with ToF-SIMS: spectra interpretation and stability issues
    Trouiller, Q.
    Petitdidier, S.
    Ravanel, X.
    Broussous, L.
    Juhel, M.
    Kwakman, L. F. Tz.
    Wyon, C.
    ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII, 2008, 134 : 371 - +
  • [35] Analysis of airborne boron and phosphorus contaminations on wafer surface by TOF-SIMS
    Mo, Zhiqiang
    Gui, Dong
    Hua, Younan
    Zhao, Siping
    Xing, Zhenxiang
    2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 677 - +
  • [36] ToF-SIMS and SEM-EDS analysis of the surface of chosen bioindicators
    Szynkowska, M. I.
    Pawlaczyk, A.
    Rogowski, J.
    APPLIED SURFACE SCIENCE, 2008, 255 (04) : 1165 - 1169
  • [37] Fiber surface analysis with XPS, AFM, ToF-SIMS: Principle and application
    State Key Lab. of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China
    不详
    Zhongguo Zaozh Xuebao, 2006, 4 (97-101):
  • [38] Analysis of the surface chemistry of oxidized polyethylene: comparison of XPS and ToF-SIMS
    Briggs, D
    Brewis, DM
    Dahm, RH
    Fletcher, IW
    SURFACE AND INTERFACE ANALYSIS, 2003, 35 (02) : 156 - 167
  • [39] Surface analysis of diblock copolymer films by TOF-SIMS in combination with AFM
    Lee, Jihye
    Shin, Kwanwoo
    Lee, Kang-Bong
    Lee, Yeonhee
    SURFACE AND INTERFACE ANALYSIS, 2014, 46 : 87 - 91
  • [40] Applications of ToF-SIMS in Surface Chemistry Analysis of Lignocellulosic Biomass: A Review
    Mou, Hong Yan
    Wu, Shubin
    Fardim, Pedro
    BIORESOURCES, 2016, 11 (02): : 5581 - 5599