Inhibition effect of twins to grain growth in ZnO varistors

被引：0
|
作者：
He, Jinliang [1 ]
Hu, Jun [1 ]
Tu, Youping [2 ]
Ding, Lijian [2 ]
Han, Se-Won [3 ]
Cho, Han-Goo [3 ]
机构：
[1] Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China
[2] North China Elect Power Univ, Dept Elect Engn, Beijing 102206, Peoples R China
[3] Korea Electrotechnol Res Inst, Div Elect Mat, Chang Won, South Korea
来源：
ICPASM 2005: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1 AND 2 | 2006年
关键词：
ZnO varistor; twin; grain growth; dopant;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By comparing the experimental results of two different systems ZnO varistors, we identify that Sb2O3 is the origin of twinning in commercial ZnO varistors. The additive of Bi2O3 weakens the effect of Sb2O3 to form twins while the Al2O3 dopant strengthens the twinning. The twins have obvious effect to inhibit ZnO grain growth and uniform its microstructure, because the formed twins result in increasing the mobility viscosity-of ZnO grain and grain boundary, and making them dragged during the sintering course.
引用
收藏
页码：971 / +
页数：2
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