Corrective effect of average grain size on grain boundary number of ZnO varistors

被引：0
|
作者：
Tu, Youping [1 ,2 ]
Luo, Fengchao [3 ]
He, Jinliang [3 ]
Hu, Jun [3 ]
机构：
[1] North China Elect Power Univ, Beijing Key Lab High Voltage, Beijing 102206, Peoples R China
[2] North China Elect Power Univ, EMC, Beijing 102206, Peoples R China
[3] Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China
来源：
HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2 | 2008年 / 368-372卷
关键词：
ZnO varistor; corrective effect; grain size; grain boundary;
D O I：
10.4028/www.scientific.net/KEM.368-372.483
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The average intercept length and related corrective method are proposed to calculate the average grain boundary number. The average value of barrier voltage by direct measurement to single grain boundary is 3.3V in literatures, but from our prepared ZnO varistor samples, the value of the average barrier voltage by the average grain size is only 2.3 V. It is in the range from 3.24 to 3.38 V by the proposed method, which is very close to the direct measured value 3.3V of the single grain boundary. The introduced method to calculate average grain size has an obvious effect to correct the calculated barrier voltage to near the actual one by direct measurement to single grain boundary.
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页码：483 / +
页数：2
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