Investigation on Non-invasive Current Mismatch Measurement in Paralleled GaN HEMTs

被引：3

作者：

Lauer, A. ^{[2
]}

Niakan, H. ^{[1
]}

Hiller, M. ^{[2
]}

Parkhideh, B. ^{[1
]}

机构：

[1] Univ North Carolina Charlotte, Elect & Comp Engn Dept, Energy Prod & Infrastruct Ctr EPIC, Charlotte, NC USA

[2] Karlsruhe Inst Technol, Electrotech Inst ETI, Power Elect Syst, Karlsruhe, Germany

来源：

2019 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE 2019 - ECCE ASIA) | 2019年

基金：

美国国家科学基金会;

关键词：

Current measurement; GaN HEMTs; magneto-resistor; two-dimensional electron gas (2DEG); wide bandgap; CURRENT SENSOR;

D O I：

10.23919/icpe2019-ecceasia42246.2019.8797099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On the recent advancements in current sensor field, single chip contactless current sensors enable the end users to efficiently monitor the switching current in modern power electronics systems. This work further investigates a novel low-cost measurement technique based on Magneto-resistive (MR) sensors. The process uses a single current sensing unit, measuring the current mismatch between the two parallel Gallium Nitride (GaN) MOSFETs, which would be used for prognostic and protection purposes. The magnetic field distribution analysis of GaN devices in switching converter is investigated using FEA simulations, in order to optimize the MR sensor location. The experimental results verify the sensitivity and linearity of the sensing unit up to 20 A of current mismatch.

引用

页码：899 / 904

页数：6

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