Contact resistance in carbon nanostructure via interconnects

被引：33

作者：

Wu, Wen ^{[1
]}

Krishnan, Shoba ^{[1
]}

Yamada, Toshishige ^{[1
]}

Sun, Xuhui ^{[1
]}

Wilhite, Patrick ^{[1
]}

Wu, Raymond ^{[1
]}

Li, Ke ^{[1
]}

Yang, Cary Y. ^{[1
]}

机构：

[1] Santa Clara Univ, Ctr Nanostruct, Santa Clara, CA 95053 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

关键词：

atomic force microscopy; carbon fibres; contact resistance; electrical resistivity; interconnections; metal-insulator boundaries; metallic thin films; nanofibres; silicon compounds; titanium; NANOTUBES; TRANSPORT;

D O I：

10.1063/1.3123164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an in-depth electrical characterization of contact resistance in carbon nanostructure via interconnects. Test structures designed and fabricated for via applications contain vertically aligned arrays of carbon nanofibers (CNFs) grown on a thin titanium film on silicon substrate and embedded in silicon dioxide. Current-voltage measurements are performed on single CNFs using atomic force microscope current-sensing technique. By analyzing the dependence of measured resistance on CNF diameter, we extract the CNF resistivity and the metal-CNF contact resistance.

引用

页数：3

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