Contact resistance of low-temperature carbon nanotube vertical interconnects

被引：0
|
作者：
Vollebregt, Sten [1 ]
Chiaramonti, Ann N. [2 ]
Ishihara, Ryoichi [1 ]
Schellevis, Hugo [1 ]
Beenakker, Kees [1 ]
机构：
[1] Delft Univ Technol, Fac Elect Engn Math & Comp Sci, Delft Inst Microsyst & Nanoelect, NL-2628 CT Delft, Netherlands
[2] Natl Inst Stand & Technol, Mat Reliabil Div, Boulder, CO 80305 USA
来源：
2012 12TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2012年
关键词：
PERFORMANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical contact resistance and length dependant resistance of vertically aligned carbon nanotubes (CNT) grown at 500 degrees C with high tube density (10(11) cm(-2)) are investigated by measuring samples with different CNT lengths. Cross-sectional imaging revealed that the CNT tips are well embedded over a length of several hundred nm. The determined contact resistance of 18 k Omega is low, which is attributed to a combination of CNT tip embedding and tip growth mechanism. When the CNT mean free path determined by Raman spectroscopy is compared with that obtained from the electrical measurements, it shows that multiple walls are conducting in parallel per CNT.
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页数：5
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