Barrier layer effect of titanium-tungsten on the electromigration in sputtered copper films on polyimide

被引：12
|
作者：
Wang, HW [1 ]
Chiou, BS
机构：
[1] Natl Chiao Tung Univ, Inst Electrophys, Hsinchu, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan
[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2000年 / 11卷 / 01期
关键词：
D O I：
10.1023/A:1008995902371
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Titanium-tungsten is employed as the diffusion barrier in a Cu/barrier/polyimide/Si system. The electromigration damage (EMD) of Cu with a TiW barrier is investigated utilizing an empirical formula. Two activation energies are obtained suggesting a surface electromigration mechanism at low temperature (140-190 degrees C) and a combined migration mechanism at high temperature (190-230 degrees C). The presence of the TiW barrier layer improves the high temperature electromigration resistance. The effects of the TiW barrier on the microstructure and electrical properties of Cu metallization are discussed.
引用
收藏
页码：17 / 24
页数：8
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