An investigation of structural and electrical properties of boron doped and undoped nanocrystalline diamond films

被引：8
|
作者：
Hikavyy, A.
Clauws, P.
Maes, J.
Moshchalkov, V. V.
Butler, J. E.
Feygelson, T.
Williams, O. A.
Daenen, M.
Haenen, K.
机构：
[1] Univ Ghent, B-9000 Ghent, Belgium
[2] Katholieke Univ Leuven, INPAC, Pulsed Fields Grp, B-3001 Heverlee, Belgium
[3] USN, Res Lab, Washington, DC 20375 USA
[4] Hasselt Univ, Mat Res Inst, B-3590 Diepenbeek, Belgium
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 12期
关键词：
D O I：
10.1002/pssa.200671118
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanocrystalline and microcrystalline undoped and boron doped diamond films are investigated by means of SEM, Raman and photocurrent techniques. SEM measurements on nanocrystalline diamond show the typical diamond columnar structure whereas for microcrystalline diamond such structure is not observed. Raman investigation shows a clear diamond peak at 1332 cm(-1) for all investigated films and a Fano resonance is observed for the microcrystalline sample prepared with 2000 ppm of boron in the gas mixture indicating a transition into the semi-metallic state. Photocurrent measurements also show a presence of boron in some films. It is found that when temperature is decreased lower than 80 K, the boron photocurrent threshold in the case of NCD material behaves differently compared to bulk diamond. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：3021 / 3027
页数：7
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