A class-AB 1.65GHz-2GHz broadband CMOS medium power amplifier

被引：0
|
作者：
Aniktar, H. [1 ]
Sjoland, H. [1 ]
Mikkelsen, J. H. [1 ]
Larsen, T. [1 ]
机构：
[1] Univ Aalborg, RISC Div, Ctr Teleinfrastructure, DK-9220 Aalborg, Denmark
来源：
Norchip 2005, Proceedings | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a single stage broadband CMOS RF power amplifier is presented. The power amplifier is fabricated in a 0.25 mu m CMOS process. Measurements-with a 2.5 V supply voltage show an output power of 18.5 dBm with an associated PAE of 16% at the 1-dB compression point. The measured gain is 5.1 +/- 0.5 dB from 1.65 to 2 GHz, Simulated and measured results agree reasonably well.
引用
收藏
页码：269 / 272
页数：4
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