Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy

被引：37

作者：

Yang, Wenmin ^{[1
]}

Yang, Shuo ^{[1
]}

Zhang, Qinghua ^{[2
]}

Xu, Yang ^{[1
]}

Shen, Shipeng ^{[1
]}

Liao, Jian ^{[1
]}

Teng, Jing ^{[1
]}

Nan, Cewen ^{[2
]}

Gu, Lin ^{[1
]}

Sun, Young ^{[1
]}

Wu, Kehui ^{[1
]}

Li, Yongqing ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 09期

基金：

美国国家科学基金会;

关键词：

GIANT NEGATIVE MAGNETORESISTANCE; MICROWAVE; FILMS;

D O I：

10.1063/1.4895073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that thin films of a prototype topological insulator, Bi2Se3, can be epitaxially grown onto the (0001) surface of BaFe12O19 (BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi2Se3 thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi2Se3/BaM heterostructures the low field MR is parabola-shaped, which is positive in perpendicular fields and negative in parallel fields. The magnetic field and temperature dependence of the MR is explained as a consequence of the suppression of WAL due to strong magnetic interactions at the Bi2Se3/BaM interface. (C) 2014 AIP Publishing LLC.

引用

页数：4

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