Integrated chip-scale simulation of pattern dependencies in copper electroplating and copper chemical mechanical polishing processes

被引:8
|
作者
Tugbawa, TE [1 ]
Park, TH [1 ]
Boning, DS [1 ]
机构
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
关键词
D O I
10.1109/IITC.2002.1014922
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a characterization and modeling methodology for chip-level simulation of pattern dependencies in the fabrication of copper interconnect. The methodology integrates semi-empirical models for copper CMP and copper plating processes, and uses a specialized test mask and design of experiment for calibration purposes. We demonstrate the methodology with a four step copper CMP process and a superfill electroplating technology example.
引用
收藏
页码:167 / 169
页数:3
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