Reversing hot-carrier energy-relaxation in graphene with a magnetic field

被引：5
|
作者：
Ramamoorthy, H. [1 ]
Somphonsane, R. [2 ]
He, G. [1 ]
Ferry, D. K. [3 ,4 ,5 ]
Ochiai, Y. [5 ]
Aoki, N. [5 ]
Bird, J. P. [1 ,5 ]
机构：
[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
[2] King Mongkuts Inst Technol Ladkrabang, Dept Phys, Bangkok 10520, Thailand
[3] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
[4] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
[5] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 19期
基金：
美国国家科学基金会;
关键词：
ELECTRON BOLOMETER; EFFECT TRANSISTORS; PHOTOCURRENT; SCATTERING;
D O I：
10.1063/1.4878535
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the influence of a perpendicular magnetic field on hot-carrier energy relaxation in bilayer graphene. Working in the regime of incipient Landau quantization, we find that the magnetic field influences the relaxation in a very different manner, dependent upon the position of the Fermi level relative to the Dirac point. While for carrier densities >10(12) cm(-2) relaxation is slowed by the magnetic field, as the density of free carriers approaches zero it instead becomes quicker. We discuss this behavior in terms of the emergence of the zero-energy Landau level, and the role of charge puddling in graphene. (C) 2014 AIP Publishing LLC.
引用
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页数：5
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