The wettability of molten aluminum droplets on the 3C-SiC surface: Molecular dynamics study

被引:14
|
作者
Lv, Yi [1 ]
Chong, Perk Lin [2 ]
Liu, Sheng [3 ]
机构
[1] Hubei Univ Arts & Sci, Sch Mech Engn, Xiangyang, Peoples R China
[2] Teesside Univ, Sch Comp Engn & Digital Technol, Middlesbrough, Cleveland, England
[3] Wuhan Univ, Inst Technol Sci, Wuhan, Peoples R China
关键词
Molten Al droplet; 3C-SiC; Wettability; Semiconductor; Surface structure; SIC PARTICLES; AB-INITIO; ADHESION; TENSION; COPPER;
D O I
10.1016/j.mssp.2022.106452
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
AlSiC composites is an irreplaceable material for high temperature semiconductor devices due to its unique performance of high thermal conductivity, low thermal expansion coefficient and bending strength. Understanding of the atomic level interactions between SiC and Al is paramount important. This leads to appropriate control on the transport process at the solid-liquid interface in the preparation of SiC reinforced aluminum matrix composites. To characterize the solid-liquid interaction, the aim is to perform molecular dynamics study on the wetting behavior of molten aluminum droplets on the 3C-SiC surface. The wettability of four crystal surface structure including Si-terminated, C-terminated, rectangular groove, wedge groove was characterized. The corresponding contact angles theta were 113.52 degrees, 80.11 degrees, 108.93 degrees and 132.83 degrees respectively. It was found that the atomic surface terminals and crystal surface morphology play an important role in the wetting behavior of 3C-SiC. High hydrophilic was observed on the C-terminated surface, while the wedge-shaped surface showed high hydrophobic. These theoretical findings demonstrate the effective modeling strategies when using wetting behavior as an interface modeling framework.
引用
收藏
页数:9
相关论文
共 50 条
  • [31] The Wettability and Diffusion of Al Droplets on the C- and Si-Terminated 4H-SiC Surfaces: A Classic Molecular Dynamics Study
    Yi Lv
    Feng Liao
    Chengcheng Peng
    Sheng Liu
    Journal of Electronic Materials, 2022, 51 : 6921 - 6929
  • [32] PREDICTIVE MODELING OF INORGANIC 3C-SiC FRICTION MATERIALS USING MOLECULAR DYNAMICS SIMULATION
    Zhang, Yizhan
    LeNeave, Cortney
    Yi, Yun-Bo
    INTERNATIONAL JOURNAL FOR MULTISCALE COMPUTATIONAL ENGINEERING, 2023, 21 (04) : 35 - 55
  • [33] Molecular dynamics modeling of atomic displacement cascades in 3C-SiC: Comparison of interatomic potentials
    Samolyuk, G. D.
    Osetsky, Y. N.
    Stoller, R. E.
    JOURNAL OF NUCLEAR MATERIALS, 2015, 465 : 83 - 88
  • [34] Effect of Nanoindentation Temperature on Plastic Deformation of 3C-SiC Based on the Molecular Dynamics Method
    Chen, Tao
    Dong, Le
    Yi, Jiaqi
    Ning, Xiang
    Li, Wenjie
    Wu, Nanxing
    JOURNAL OF NANOMATERIALS, 2022, 2022
  • [35] MOLECULAR AND ION-BEAM EPITAXY OF 3C-SIC
    MIYAZAWA, T
    YOSHIDA, S
    MISAWA, S
    GONDA, S
    OHDOMARI, I
    APPLIED PHYSICS LETTERS, 1984, 45 (04) : 380 - 382
  • [36] Elastoplastic deformation analysis of 3C-SiC film on 6H-SiC surface based on molecular dynamics nano-indentation simulation
    Dongling Yu
    Huiling Zhang
    Mengjuan Zhong
    Yongzhen Fang
    Qi Zheng
    Nanxing Wu
    Journal of Materials Research, 2022, 37 : 3668 - 3679
  • [37] Elastoplastic deformation analysis of 3C-SiC film on 6H-SiC surface based on molecular dynamics nano-indentation simulation
    Yu, Dongling
    Zhang, Huiling
    Zhong, Mengjuan
    Fang, Yongzhen
    Zheng, Qi
    Wu, Nanxing
    JOURNAL OF MATERIALS RESEARCH, 2022, 37 (21) : 3668 - 3679
  • [38] Atomic structure of the 3C-SiC(001) surface reconstructions
    Kitabatake, M
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 421 - 424
  • [39] Regrowth of 3C-SiC on CMP treated 3C-SiC/Si epitaxial layers
    Mank, H
    Moisson, C
    Turover, D
    Twigg, M
    Saddow, SE
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 197 - 200
  • [40] Study of the reaction at Cu/3C-SiC interface
    An, Z
    Ohi, A
    Hirai, M
    Kusaka, M
    Iwami, M
    SURFACE SCIENCE, 2001, 493 (1-3) : 182 - 187