Low-power full-band UWB active pulse shaping circuit using 0.18-μm CMOS technology

被引：0
|
作者：
Wong, King Wall [1 ]
Karri, Satyanarayana Reddy [1 ]
Zheng, Yuanjin [1 ]
机构：
[1] Inst Microelect, Singapore, Singapore
来源：
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2006年
关键词：
UWB; driver amplifier; pulse shaping; CMOS circuit; low power;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-power active pulse shaping circuit for ultra wide-band (UWB) dual-band transmitter is presented. The circuit is fully integrated in 0.18-mu m CMOS technology and only consumes a total power of 10.8mW from a supply voltage of 1.8V. The circuit is composed of a passive part shaping the pulse and an active part providing gain over the whole UWB frequency range (3.1 to 10.6GHz) to fit the transmitted pulse to the federal communications commission (FCC) mask. This output stage circuit provides a gain of 7 to 8dB across the band of interest.
引用
收藏
页码：561 / +
页数：2
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