Phase modulated spectroscopic ellipsometry of dielectric multilayer beam combiner

被引：9

作者：

Bhattacharyya, D ^{[1
]}

Sahoo, NK ^{[1
]}

Thakur, S ^{[1
]}

Das, NC ^{[1
]}

机构：

[1] Bhabha Atom Res Ctr, Div Spect, Bombay 400085, Maharashtra, India

来源：

THIN SOLID FILMS | 2002年 / 416卷 / 1-2期

关键词：

spectroscopic ellipsometry; dielectric; beam;

D O I：

10.1016/S0040-6090(02)00729-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An algorithm to characterise multilayer optical coatings with large numbers of layers by spectroscopic ellipsometry, using a discrete spectral-zone fitting approach, has been demonstrated by characterising a 27-layer TiO2/SiO2 multilayer beam combiner in the wavelength range of 280-1200 nm. The ellipsometric spectra are fitted first in the wavelength regime of 700-1200 nm and the sample structure was determined. TiO2 and SiO2 layers have been assumed to be transparent in this wavelength regime with dispersion-less refractive indices. The data were then fitted in the wavelength range of 280-340 nm to find the dispersion relation for the optical constants of TiO2. Finally, the fitting has been done in the wavelength range of 340-700 nm and the true dispersion of refractive index of TiO2 along with the best fit sample structure have been obtained. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：97 / 105

页数：9

共 50 条

[41] DESIGN AND DEVELOPMENT OF A THIN-FILM DIELECTRIC BEAM COMBINER
APPARAO, KVSR
SAHOO, NK
BULLETIN OF MATERIALS SCIENCE, 1986, 8 (03) : 343 - 346
[42] Investigation of multilayer samples of porous silicon with periodic structure by spectroscopic ellipsometry
Veremeichyk, T. V.
Makarenko, O. V.
Shevchenko, V. B.
Ivanchuk, S. Y.
Rybalochka, A. V.
LOW TEMPERATURE PHYSICS, 2025, 51 (02) : 239 - 243
[43] MULTILAYER ANALYSIS OF ION-IMPLANTED GAAS USING SPECTROSCOPIC ELLIPSOMETRY
ERMAN, M
THEETEN, JB
SURFACE AND INTERFACE ANALYSIS, 1982, 4 (03) : 98 - 108
[44] Composition profiling of graded dielectric function materials by spectroscopic ellipsometry
Trolier-McKinstry, S
Koh, J
THIN SOLID FILMS, 1998, 313 : 389 - 393
[45] Dielectric function and critical points of AlP determined by spectroscopic ellipsometry
Hwang, S. Y.
Kim, T. J.
Jung, Y. W.
Barange, N. S.
Park, H. G.
Kim, J. Y.
Kang, Y. R.
Kim, Y. D.
Shin, S. H.
Song, J. D.
Liang, C. -T.
Chang, Y. -C.
JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 587 : 361 - 364
[46] DIELECTRIC FUNCTION OF MONOCRYSTALLINE MOSI2 BY SPECTROSCOPIC ELLIPSOMETRY
GED, P
MADAR, R
SENATEUR, JP
PHYSICAL REVIEW B, 1984, 29 (12): : 6981 - 6984
[47] Spectroscopic ellipsometry of gold clusters embedded in thin dielectric films
Tsutsumanova, G. G.
Sendova-Vassileva, M.
Sendova, M.
Pivin, J. C.
Russev, S. C.
SIX INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION, 2007, 899 : 803 - 803
[48] DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY
ASPNES, DE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1057 - 1060
[49] Composition profiling of graded dielectric function materials by spectroscopic ellipsometry
TrolierMcKinstry, S
Koh, J
ELECTRICALLY BASED MICROSTRUCTURAL CHARACTERIZATION, 1996, 411 : 185 - 190
[50] Spectroscopic Ellipsometry of Porous Low-κ Dielectric Thin Films
Kamineni, V. K.
Settens, C. M.
Grill, A.
Antonelli, G. A.
Matyi, R. J.
Diebold, A. C.
FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009, 2009, 1173 : 168 - +

← 1 2 3 4 5 →