Physically based simulation of strong charge multiplication events in power devices triggered by incident ions

被引：0
|
作者：
Kaindl, W [1 ]
Sölkner, G [1 ]
Becker, HW [1 ]
Meijer, J [1 ]
Schulze, HJ [1 ]
Wachutka, G [1 ]
机构：
[1] Tech Univ Munich, Inst Phys Electrotechnol, D-80290 Munich, Germany
来源：
ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Non-destructive ion irradiation experiments and corresponding device simulations were performed in order to investigate the radiation sensitivity of different device structures. We modeled an irradiation experiment in which a high power diode is exposed to Kr-84, Si-28, and C-12-ions in order to validate and calibrate the simulation models. Device simulations reveal spatial and temporal distributions of electric field and carrier denisities occuring in the interior of the device. Therefore, they help to identify and explain the mechanism of strong charge multiplication induced by incident ions.
引用
收藏
页码：257 / 260
页数：4
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