Atomic force microscopy study of surface roughening of sputter-deposited TiN thin films

被引:64
|
作者
Liu, ZJ
Jiang, N
Shen, YG
Mai, YW
机构
[1] City Univ Hong Kong, Dept Mfg Engn & Engn Management, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Mfg & Engn Management, Kowloon, Hong Kong, Peoples R China
[3] Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Ctr Adv Mat Technol, Sydney, NSW 2006, Australia
关键词
D O I
10.1063/1.1504497
中图分类号
O59 [应用物理学];
学科分类号
摘要
The kinetic surface roughening of TiN thin films sputter-deposited on silicon substrates at room temperature was studied. Scaling analyses were made by surface measurements of atomic force microscopy (AFM). The roughness exponent alpha and growth exponent beta that characterize scaling behaviors of surface growth were calculated using the height-height correlation function H(r) and power spectra P(f). The exponent values of alpha=similar to0.98 and beta=similar to0.28 indicated that the surface growth behavior of sputtered TiN thin films could be adequately explained by a simple linear growth model showing surface diffusion as a smoothing effect and shot noise as a roughening mechanism. An inverse Fourier transformation technique was also used to generate the evolution of theoretical surface profiles that showed good agreement with AFM measurements. (C) 2002 American Institute of Physics.
引用
收藏
页码:3559 / 3563
页数:5
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