Phonon frequencies of a highly strained AIN layer coherently grown on 6H-SiC (0001)

被引：5
|
作者：
Kaneko, M. [1 ]
Kimoto, T. [1 ]
Suda, J. [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
AIP ADVANCES | 2017年 / 7卷 / 01期
关键词：
DEFORMATION POTENTIALS; ELASTIC-CONSTANTS; ALUMINUM NITRIDE; ALN; GAN; PARAMETERS; MODE;
D O I：
10.1063/1.4974500
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Phonon frequencies of a high-quality AlN layer coherently grown on a 6H-SiC (0001) substrate are investigated by Raman scattering. Owing to the largest strain in our coherent AlN layer among heteroepitaxially grown AlN layers ever reported, phonon frequencies of the E-2 (low), E-2 (high), and A(1) (LO) modes are considerably shifted to 244.5 (-3.3, compared with bulk AlN), 672.1 (+16.3), and 899 (+11) cm(-1), respectively. Full widths at half maximum of the phonon modes in the coherent AlN are almost equal to those of high-quality bulk AlN, clearly indicating its high crystalline quality and uniform strain. We discuss accuracy of phonon deformation potentials reported by several other groups thorough comparing our experimental results. (C) 2017 Author(s).
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页数：5
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