Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties

被引：12
|
作者：
Yeap, G. H. [1 ]
Rybchenko, S. I. [1 ]
Itskevich, I. E. [1 ]
Haywood, S. K. [1 ]
机构：
[1] Univ Hull, Dept Engn, Kingston Upon Hull HU6 7RX, N Humberside, England
来源：
PHYSICAL REVIEW B | 2009年 / 79卷 / 07期
关键词：
electronic structure; III-V semiconductors; indium compounds; infrared spectra; self-assembly; semiconductor quantum dots; FINITE-ELEMENT-ANALYSIS; SEMICONDUCTOR STRUCTURES; STRAIN DISTRIBUTION; BAND-EDGES; INAS/GAAS; NANOSTRUCTURES; ALLOYS; 8-BAND;
D O I：
10.1103/PhysRevB.79.075305
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InSb-based self-assembled quantum dots are very promising for the midinfrared (3-5 mu m) optical range. We have analyzed the effect of geometry and composition on the electronic structure and optical spectra of InAsxSb1-x/InAs dots. The calculated transition energies agree well with the available experimental data. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa.
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页数：6
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