Bi4Ti3O12 ferroelectric thin films: Morphology and electrical characteristics

被引：0
|
作者：
SoaresCarvalho, F [1 ]
Jauberteau, I [1 ]
Thomas, P [1 ]
Mercurio, JP [1 ]
机构：
[1] LAB MAT CERAM & TRAITEMENTS SURFACE,URA CNRS 320,F-87060 LIMOGES,FRANCE
来源：
JOURNAL DE PHYSIQUE III | 1997年 / 7卷 / 06期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bi4Ti3O12 thin films have been produced on Pt/TiO2/SiO2/Si buffer layers by spin-coating using a mixed bismuth-titanium alkoxide. The crystallization of Bi4Ti3O12 is Observed at 480 degrees C. An increase of the average grain size related to an augmentation of the roughness of the films is observed with increasing coatings number. P-E hysteresis loops confirmed the ferroelectric character of the films.
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页码：1221 / 1226
页数：6
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