Highly conducting and wide-band transparent F-doped Zn1-xMgxO thin films for optoelectronic applications

被引：23
|
作者：
Guo, Y. M. [1 ]
Zhu, L. P. [1 ,2 ]
Jiang, J. [1 ]
Li, Y. G. [1 ]
Hu, L. [1 ]
Xu, H. B. [1 ]
Ye, Z. Z. [1 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 602卷
基金：
中国国家自然科学基金;
关键词：
F-doped; Wide-band; Transparent conducting oxide; F concentration; Pulsed laser deposition; Zn1-xMgxO thin films; OPTICAL-PROPERTIES; DEPOSITION TEMPERATURE; GROWTH TEMPERATURE; AL; MG; OFFSET;
D O I：
10.1016/j.jallcom.2014.02.181
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Fluorine (F) doped Zn-1 xMgxO thin films were deposited on quartz via pulsed laser deposition (PLD). F doping can decrease resistivity and broaden the bandgap of Zn-1 xMgxO thin films as well when F concentration is less than 3%, otherwise F doping will backfire. The structural, electrical, and optical properties of these thin films were studied as a function of deposition temperatures. The Zn0.9Mg0.1OF0.03 thin films deposited at 350 degrees C are optimal to be applied as transparent electrodes, taking both electrical and optical properties into account. Thin films have a low resistivity about 6.92 x 10 (4)Omega cm, with a carrier concentration of 5.26 x 10(20) cm (3), and a Hall mobility of 17.2 cm(2) V (1) s (1). The average optical transmittance is higher than 85% in the visible wavelength region. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：294 / 299
页数：6
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