Highly conducting and wide-band transparent F-doped Zn1-xMgxO thin films for optoelectronic applications

被引：23

作者：

Guo, Y. M. ^{[1
]}

Zhu, L. P. ^{[1
,2
]}

Jiang, J. ^{[1
]}

Li, Y. G. ^{[1
]}

Hu, L. ^{[1
]}

Xu, H. B. ^{[1
]}

Ye, Z. Z. ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 602卷

基金：

中国国家自然科学基金;

关键词：

F-doped; Wide-band; Transparent conducting oxide; F concentration; Pulsed laser deposition; Zn1-xMgxO thin films; OPTICAL-PROPERTIES; DEPOSITION TEMPERATURE; GROWTH TEMPERATURE; AL; MG; OFFSET;

D O I：

10.1016/j.jallcom.2014.02.181

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Fluorine (F) doped Zn-1 xMgxO thin films were deposited on quartz via pulsed laser deposition (PLD). F doping can decrease resistivity and broaden the bandgap of Zn-1 xMgxO thin films as well when F concentration is less than 3%, otherwise F doping will backfire. The structural, electrical, and optical properties of these thin films were studied as a function of deposition temperatures. The Zn0.9Mg0.1OF0.03 thin films deposited at 350 degrees C are optimal to be applied as transparent electrodes, taking both electrical and optical properties into account. Thin films have a low resistivity about 6.92 x 10 (4)Omega cm, with a carrier concentration of 5.26 x 10(20) cm (3), and a Hall mobility of 17.2 cm(2) V (1) s (1). The average optical transmittance is higher than 85% in the visible wavelength region. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：294 / 299

页数：6

共 50 条

[1] Transparent conducting Zn1-xMgxO:(Al,In) thin films
Cohen, DJ
Ruthe, KC
Barnett, SA
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 459 - 467
[2] Atomic layer deposition of Zn1-xMgxO:Al transparent conducting films
Luka, G.
Witkowski, B. S.
Wachnicki, L.
Goscinski, K.
Jakiela, R.
Guziewicz, E.
Godlewski, M.
Zielony, E.
Bieganski, P.
Placzek-Popko, E.
Lisowski, W.
Sobczak, J. W.
Jablonski, A.
JOURNAL OF MATERIALS SCIENCE, 2014, 49 (04) : 1512 - 1518
[3] Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition
Matsubara, K
Tampo, H
Shibata, H
Yamada, A
Fons, P
Iwata, K
Niki, S
APPLIED PHYSICS LETTERS, 2004, 85 (08) : 1374 - 1376
[4] Highly conducting and transparent tin-doped CdO thin films for optoelectronic applications
Gupta, R. K.
Ghosh, K.
Patel, R.
Mishra, S. R.
Kahol, P. K.
MATERIALS LETTERS, 2008, 62 (25) : 4103 - 4105
[5] Band gap modified Al-doped Zn1−xMgxO and Zn1−yCdyO transparent conducting thin films
L. B. Duan
X. R. Zhao
J. M. Liu
W. C. Geng
H. N. Sun
H. Y. Xie
Journal of Materials Science: Materials in Electronics, 2012, 23 : 1016 - 1021
[6] Structural, electrical and optical properties of transparent Zn1-xMgxO nanocomposite thin films
Kaushal, Ajay
Pathak, Dinesh
Bedi, R. K.
Kaur, Davinder
THIN SOLID FILMS, 2009, 518 (05) : 1394 - 1398
[7] Synthesis and characterization of Zn1-xMgxO thin films
Raji, P.
Ramachandran, K.
Sanjeeviraja, C.
JOURNAL OF THERMOPHYSICS AND HEAT TRANSFER, 2006, 20 (03) : 632 - 635
[8] Promising novel transparent conductive F-doped ZnSnO3 thin films for optoelectronic applications
El Radaf, I. M.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (03)
[9] Promising novel transparent conductive F-doped ZnSnO3 thin films for optoelectronic applications
I. M. El Radaf
Journal of Materials Science: Materials in Electronics, 2023, 34
[10] Highly transparent Zn1-xMgxO/ITO multilayer for window of thin film solar cells
Kang, Dong-Won
Chowdhury, Amartya
Sichanugrist, Porponth
Abe, Yusuke
Konishi, Hirofumi
Tsuda, Yuki
Shinagawa, Tomohiro
Tokioka, Hidetada
Fuchigami, Hiroyuki
Konagai, Makoto
CURRENT APPLIED PHYSICS, 2015, 15 (09) : 1022 - 1026

← 1 2 3 4 5 →