Measurement of single-event effects on a large number of commercial DRAMs

被引：11

作者：

Sasada, T. ^{[1
]}

Ichikawa, S.

Kanai, T.

机构：

[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan

[2] Space Engn Dev Co Ltd, Tsukuba, Ibaraki 3050032, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 04期

关键词：

CMOS memory integrated circuits; DRAM chips; error correction; proton radiation effects; single-event effects; space vehicle electronics;

D O I：

10.1109/TNS.2006.880928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To evaluate the characteristics of commercial memory devices for space use, the Japan Aerospace Exploration Agency (JAXA) launched a Solid State Recorder (SSR) on the Mission Demonstration test Satellite-1 (MDS-1 or 'Tsubasa") into geo-stationary transfer orbit (GTO) in February 2002. Passing through the radiation belt exposed the MDS-1 to severe radiation environment in every orbit. This flight experiment allowed the observation of Single-Event Upsets (SEU) and Total Ionizing Dose (TID) effect on a large number of, stacked 64 Wit Dynamic Random Access Memories (DRAM). As a result, the actual SEU rates could be calculated, and the capabilities of two types of on-the-fly Error Detection and Correction (EDAC) mechanisms were confirmed. This paper presents the results of the space experiment-of SSR, focusing especially on SEU analysis.

引用

页码：1806 / 1812

页数：7

共 50 条

[21] Development of facilities for investigating single-event effects
Nashiyama, I
Hirao, T
Itoh, H
Kamiya, T
Naito, I
Matsuda, S
RADECS 95 - THIRD EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1996, : 94 - 100
[22] Single-event effects in SOI technologies and devices
Musseau, O
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) : 603 - 613
[23] Single-Event Effects in CMOS Image Sensors
Lalucaa, Valerian
Goiffon, Vincent
Magnan, Pierre
Rolland, Guy
Petit, Sophie
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (04) : 2494 - 2502
[24] RadFxSat: A Flight Campaign for Recording Single-Event Effects in Commercial Off-the-Shelf Microelectronics
Austin, Rebekah A.
Sierawski, Brian D.
Trippe, James M.
Sternberg, Andrew L.
Warren, Kevin M.
Reed, Robert A.
Weller, Robert A.
Schrimpf, Ronald D.
Alles, Michael L.
Massengill, Lloyd W.
Fleetwood, Daniel M.
Buxton, Gerald W., III
Brandenburg, Jonathan C.
Fisher, W. Burns
Davis, Robert
2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2017, : 19 - 23
[25] Single-event upset in commercial silicon-on-insulator PowerPC microprocessors
Irom, F
Swift, GM
Farmanesh, FH
Johnston, AH
2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2002, : 203 - 204
[26] Frequency dependence of single-event upset in advanced commercial PowerPC microprocessors
Irom, F
Farmanesh, FE
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3505 - 3509
[27] Single-event upset in commercial silicon-on-insulator PowerPC microprocessors
Irom, F
Farmanesh, FF
Johnston, AH
Swift, GM
Millward, DG
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) : 3148 - 3155
[28] Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs
Lauenstein, Jean-Marie
Goldsman, Neil
Liu, Sandra
Titus, Jeffrey L.
Ladbury, Raymond L.
Kim, Hak S.
Phan, Anthony M.
LaBel, Kenneth A.
Zafrani, Max
Sherman, Phillip
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (06) : 2628 - 2636
[29] Evaluation of single-event upset tolerance on recent commercial memory ICs
Nemoto, N
Matsuzaki, K
Aoki, J
Akutsu, T
Matsuda, S
Naito, I
Itoh, H
Nashiyama, I
EECC'97 - PROCEEDINGS OF THE THIRD ESA ELECTRONIC COMPONENTS CONFERENCE, 1997, 395 : 461 - 466
[30] MTF and DQE measurement in imaging detectors by their single-event response
Ottonello, P.
Rottigni, G.A.
Sartori, C.
Zanella, G.
Zannoni, R.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1998, 419 (2-3): : 731 - 735

← 1 2 3 4 5 →