Polycrystalline MnGe2 thin films on InAs(001) substrates

被引：2
|
作者：
Gutierrez-Naranjo, David [1 ]
Holguin-Momaca, Jose T. [1 ]
Solis-Canto, Oscar O. [1 ]
Gupta, Preeti [2 ]
Poddar, Pankaj [2 ]
Espinosa Magana, Francisco [1 ]
Olive-Mendez, Sion F. [1 ]
机构：
[1] Ctr Invest Mat Avanzados SC CIMAV, Av Miguel de Cervantes 120, Chihuahua 31136, Chih, Mexico
[2] Natl Chem Lab, Phys & Mat Chem Div, Dr Homi Bhabha Rd, Pune 411008, Maharashtra, India
来源：
THIN SOLID FILMS | 2018年 / 657卷
关键词：
Manganese germanide; Thin films; Indium arsenide substrates; Ferromagnetism; Sputtering; 14/mcm; TEMPERATURE FERROMAGNETISM; MAGNETIC-PROPERTIES; CLUSTERS;
D O I：
10.1016/j.tsf.2018.05.007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the growth of MnGe2 thin films on InAs(001) substrates using radio frequency-magnetron cosputtering. Polycrystalline thin films were obtained at a substrate temperature of 353 K. X-ray diffractometry was used to identify the tetragonal MnGe2 phase (space group 14/mcm). Measurements of the magnetic field and temperature dependence of the magnetization revealed that the MnGe2 thin films are ferromagnetic with a magnetization of 280 kAm(-1) and a Curie temperature of 62 K. Additionally, an antiferromagnetic component is observed at low temperatures, which may arise atomic disorder at the grain boundaries between MnGe2 crystallites.
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页码：38 / 41
页数：4
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