Physics of 1.3 μm(GaIn) (NAs)/GaAs semiconductor lasers

被引:0
|
作者
Hofmann, M [1 ]
Gerhardt, N [1 ]
Wagner, A [1 ]
Stolz, W [1 ]
Koch, SW [1 ]
Rühle, WW [1 ]
机构
[1] Univ Marburg, D-35032 Marburg, Germany
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:326 / 327
页数:2
相关论文
共 50 条
  • [21] Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
    Ellmers, C
    Höhnsdorf, F
    Koch, J
    Agert, C
    Leu, S
    Karaiskaj, D
    Hofmann, M
    Stolz, W
    Rühle, WW
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (16) : 2271 - 2273
  • [22] ANALYSIS OF GAIN IN DETERMINING T-0 IN 1.3 MU-M SEMICONDUCTOR-LASERS
    ACKERMAN, DA
    SHTENGEL, GE
    HYBERTSEN, MS
    MORTON, PA
    KAZARINOV, RF
    TANBUNEK, T
    LOGAN, RA
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 250 - 263
  • [23] Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime
    Hofmann, M
    Wagner, A
    Ellmers, C
    Schlichenmeier, C
    Schäfer, S
    Höhnsdorf, F
    Koch, J
    Stolz, W
    Koch, SW
    Rühle, WW
    Hader, J
    Moloney, JV
    O'Reilly, EP
    Borchert, B
    Egorov, AY
    Riechert, H
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (20) : 3009 - 3011
  • [24] 1.3 μm GaInNAs/GaAs quantum well lasers and photodetectors
    Zhong, P
    Lin, YW
    Li, LH
    Xu, YQ
    Wei, Z
    Wu, RH
    [J]. APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 73 - 77
  • [25] GaInNAs for GaAs based lasers for the 1.3 to 1.5 μm range
    Fischer, M
    Gollub, D
    Reinhardt, M
    Kamp, M
    Forchel, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 353 - 359
  • [26] Temperature dependence of the gain in p-doped and intrinsic 1.3 μm InAs/GaAs quantum dot lasers
    Masse, N. F.
    Sweeney, S. J.
    Marko, I. P.
    Adams, A. R.
    Hatori, N.
    Sugawara, M.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (19)
  • [27] Theoretical analysis of modal gain in p-doped 1.3 μm InAs/GaAs quantum dot lasers
    Ji, Hai-Ming
    Yang, Tao
    Cao, Yu-Lian
    Ma, Wen-Quan
    Cao, Qing
    Chen, Liang-Hui
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 2009, 6 (04): : 948 - 951
  • [28] Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 μm quantum dot lasers
    Marko, IP
    Masse, N
    Sweeney, SJ
    Adams, AR
    Sellers, IR
    Mowbray, DJ
    Skolnick, MS
    Liu, HY
    Groom, KM
    [J]. 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, : 401 - 402
  • [29] Semiconductor lasers tunable from 1.3 μm to 1.54 μm for optical communication
    Su, YS
    Lin, CF
    Yu, DY
    Wu, BR
    [J]. WDM AND PHOTONIC SWITCHING DEVICES FOR NETWORK APPLICATIONS III, 2002, 4653 : 96 - 104
  • [30] Optimisation of GaAs-based (GaIn)(NAs)/GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems
    Sarzala, RP
    Nakwaski, W
    [J]. IEE PROCEEDINGS-OPTOELECTRONICS, 2004, 151 (05): : 417 - 420