Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor with a pseudomorphic InGaAs/GaAs quantum-well base

被引：4
|
作者：
Tsai, JH [1 ]
机构：
[1] Chien Kuo Inst Technol, Dept Elect Engn, Changhua, Taiwan
来源：
MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 09期
关键词：
D O I：
10.1016/S0026-2714(99)00065-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new functional AlCaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic InGaAs/GaAs quantum-well (QW) base structure is presented. Due to the insertion of an InGaAs QW between the emitter-base (E-B) junction, the valence band discontinuity can be enhanced. The excellent transistor characteristics including a high current gain of 280 and a low offset voltage of 100 mV are obtained. In addition, an interesting multiple S-shaped negative differential resistance (NDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect, (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1379 / 1387
页数：9
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