Combined electron and focused ion beam system for improvement of secondary ion yield in secondary ion mass spectrometry instrument

被引：0
|
作者：
Ji, L. [1 ]
Ji, Q. [1 ]
Leung, K. -N. [1 ]
Gough, R. A. [1 ]
机构：
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期
关键词：
D O I：
10.1063/1.2362996
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using a combined electron and focused ion beam system to improve performance of secondary ion mass spectrometry instruments has been investigated experimentally. The secondary ion yield for an Al target has been enhanced to about one order of magnitude higher with the postionization induced by the low energy electrons in the combined beam. It can be further improved with the increase of electron beam current. When the combined beam is applied to insulating targets, sample charging is also eliminated. For Teflon targets, the secondary ion signal is increased by more than a factor of 20. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [11] A C60 primary ion beam system for time of flight secondary ion mass spectrometry:: Its development and secondary ion yield characteristics
    Weibel, D
    Wong, S
    Lockyer, N
    Blenkinsopp, P
    Hill, R
    Vickerman, JC
    ANALYTICAL CHEMISTRY, 2003, 75 (07) : 1754 - 1764
  • [12] Charge neutralization using secondary electron shower for shave-off depth profiling by focused ion beam secondary ion mass spectrometry
    Ishizaki, Y.
    Yamamoto, T.
    Fujii, M.
    Owari, M.
    Nojima, M.
    Nihei, Y.
    APPLIED SURFACE SCIENCE, 2008, 255 (04) : 1351 - 1353
  • [13] Ion yield improvement for static secondary ion mass spectrometry by use of polyatomic primary ions
    De Mondt, Roel
    Van Vaeck, Luc
    Heile, Andreas
    Arlinghaus, Heinrich F.
    Nieuwjaer, Nicolas
    Delcorte, Arnaud
    Bertrand, Patrick
    Lenaerts, Jens
    Vangaever, Frank
    RAPID COMMUNICATIONS IN MASS SPECTROMETRY, 2008, 22 (10) : 1481 - 1496
  • [14] Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry
    Stevie, FA
    Downey, SW
    Brown, SR
    Shofner, TL
    Decker, MA
    Dingle, T
    Christman, L
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2476 - 2482
  • [15] Improvement of sensitivity using principal component analysis by dual focused ion beam time-of-flight secondary ion mass spectrometry
    Morita, Yoshihiro
    Owari, Masanori
    APPLIED SURFACE SCIENCE, 2008, 255 (04) : 1052 - 1054
  • [16] Combined Secondary Ion Mass Spectrometry Depth Profiling and Focused Ion Beam Analysis of Cu Films Electrodeposited under Oscillatory Conditions
    Hai, Nguyen T. M.
    Lechner, David
    Stricker, Florian
    Furrer, Julien
    Broekmann, Peter
    CHEMELECTROCHEM, 2015, 2 (05): : 664 - 671
  • [17] Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry
    Senevirathna, M. K. Indika
    Vernon, Mark
    Cooke, Graham A.
    Cross, Garnett B.
    Kozhanov, Alexander
    Williams, Michael D.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020, 38 (04):
  • [18] Secondary ion mass spectrometry
    Griffiths, Jennifer
    ANALYTICAL CHEMISTRY, 2008, 80 (19) : 7194 - 7197
  • [19] Secondary ion mass spectrometry
    1600, AOAC International (87):
  • [20] Secondary ion mass spectrometry
    Sherma, J
    JOURNAL OF AOAC INTERNATIONAL, 2004, 87 (05) : 142A - 148A
12345