Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect

被引：11
|
作者：
Saitoh, M [1 ]
Hiramoto, T [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 13期
关键词：
D O I：
10.1049/el:20040554
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Novel highly-functional single-hole transistor (SHT) logic is proposed. An SHT is fabricated which shows Coulomb blockade and negative differential conductance (NDC) due to discrete quantum levels in the ultra-small dot at room temperature. By utilising gate-controllable NDC, exclusive-OR operation is successfully demonstrated in just one SHT at room temperature.
引用
收藏
页码：836 / 837
页数：2
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